DRV8704 Datasheet, PDF (7/38 Pages) Texas Instruments – Dual H-Bridge PWM Gate Driver

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Electrical Characteristics (continued)
T_A = 25°C, over recommended operating conditions unless otherwise noted
PARAMETER
TEST CONDITIONS
ISGAIN = 00, ∆VIN = 400 mV
t_SET
Settling time (to ±1%)
ISGAIN = 01, ∆VIN = 200 mV
ISGAIN = 10, ∆VIN = 100 mV
ISGAIN = 11, ∆VIN = 50 mV
V_OFS
Offset voltage
V_IN
Input differential voltage range
V_REF
Internal reference voltage
PROTECTION CIRCUITS
ISGAIN = 00, input shorted
V_UVLO
Undervoltage lockout
VIN falling; UVLO report
VIN rising; UVLO recovery
V_OCP
T_TSD ⁽¹⁾
T_HYS ⁽¹⁾
Overcurrent protection trip level
(Voltage drop across external
FET)
Thermal shutdown temperature
Thermal shutdown hysteresis
OCPTH = 00
OCPTH = 01
OCPTH = 10
OCPTH = 11
Die temperature, T_J
Die temperature, T_J
(1) Not tested in production; limits are based on characterization data
MIN
–600
2.50
160
380
620
840
150
DRV8704
SLVSD29 – OCTOBER 2015
TYP
150
300
600
1200
2.75
6.3
7.1
250
500
750
1000
160
20
MAX UNIT
ns
4 mV
600 mV
3.00 V
V
8
320
580
mV
880
1200
180 °C
°C
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