DS92LV3221_14 Datasheet, PDF (6/30 Pages) Texas Instruments – 20-50 MHz 32-Bit Channel Link II Serializer / Deserializer

DS92LV3221, DS92LV3222
SNLS319C – OCTOBER 2009 – REVISED APRIL 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾⁽²⁾
Supply Voltage (V_DD)
LVCMOS Input Voltage
LVCMOS Output Voltage
LVDS Deserializer Input Voltage
LVDS Driver Output Voltage
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 4 seconds)
Maximum Package Power Dissipation Capacity Package Derating
θ_JA
θ_JC
ESD Rating (HBM)
−0.3V to +4V
−0.3V to (V_DD +0.3V)
−0.3V to (V_DD +0.3V)
−0.3V to +3.9V
−0.3V to +3.9V
+125°C
−65°C to +150°C
+260°C
1/θ_JA °C/W above +25°C
35.7 °C/W⁽³⁾
12.6 °C/W
>4 kV
(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(2) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions.
(3) 4 Layer JEDEC
RECOMMENDED OPERATING CONDITIONS
Supply Voltage (V_DD)
Supply Voltage (IOV_DD)
(SER ONLY)
Operating Free Air Temperature (T_A)
Input Clock Rate
Tolerable Supply Noise
3.3V I/O Interface
1.8V I/O Interface
Min
3.135
3.135
1.71
−40
20
Nom
3.3
3.3
1.8
+25
Max
3.465
3.465
1.89
+85
50
100
Units
V
V
V
°C
MHz
mV_P-P
ELECTRICAL CHARACTERISTICS
Over recommended operating supply and temperature ranges unless otherwise specified.⁽¹⁾⁽²⁾
Symbol
Parameter
Conditions
Min
LVCMOS DC SPECIFICATIONS
V_IH
High Level Input Voltage
Tx: IOV_DD = 1.71V to 1.89V
Tx: IOV_DD = 3.135V to 3.465V
Rx
0.65 x
IOV_DD
2.0
V_IL
Low Level Input Voltage
Tx: IOV_DD = 1.71V to 1.89V
GND
V_CL
Input Clamp Voltage
I_IN
Input Current
Tx: IOV_DD = 3.135V to 3.465V
Rx
I_CL = −18 mA
Tx: V_IN = 0V or 3.465V(1.89V)
IOV_DD = 3.465V(1.89V)
Rx: V_IN = 0V or 3.465V
GND
−10
−10
Typ
Max Units
IOV_DD +
0.3
V
V_DD
0.35 x
IOV_DD
V
0.8
−0.8 −1.5
V
+10
µA
+10
(1) Typical values represent most likely parametric norms at V_DD = 3.3V, T_A = +25°C, and at the Recommended Operating Conditions at
the time of product characterization and are not verified.
(2) Current into a the device is defined as positive. Current out of a device pin is defined as negative. Voltages are referenced to ground
except V_OD, ΔV_OD, V_TH, V_TL which are differential voltages.
6
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