DS90UR910-Q1 Datasheet, PDF (5/34 Pages) Texas Instruments – 10 - 75 MHz 24-bit Color FPD-Link II to CSI-2 Converter

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DS90UR910-Q1
SNLS414D – JUNE 2012 – REVISED JULY 2015
5 Specifications
5.1 Absolute Maximum Ratings ^{(1) (2)}
MIN
MAX
UNIT
Supply Voltage – V_DDA, V_DDP, V_DDL, V_DDCSI (1.8V)
Supply Voltage – V_DDIO (1.8V I/O)
Supply Voltage – V_DDIO (3.3V I/O)
LVCMOS I/O Voltage
−0.3
2.5
V
−0.3
2.5
V
-0.3
4.0
V
−0.3
(V_DDIO +
0.3)
V
Receiver Input Voltage
−0.3
(V_DDA +
0.3)
V
CSI-2 Output Voltage
−0.3
(V_DDCSI +
0.3V)
V
Junction Temperature
150
°C
4L WQFN Package Maximum Power Dissipation Capacity at 25°C
Storage temperature, T_stg
−65
150
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under . Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) For soldering specifications, see product folder at www.ti.com and SNOA549.
5.2 ESD Ratings
V_(ESD)
Electrostatic
discharge
Human body model (HBM), per AEC Q100-002, all pins ⁽¹⁾
Charged device model (CDM), per AEC Q100-011, all pins
Machine model (MM)
(IEC, powered-up only)
R_D = 330 Ω, C_S = 150 pF
(ISO10605)
R_D = 330 Ω, C_S = 150 pF
(ISO10605)
R_D = 2 kΩ, C_S = 150 pF or
330 pF
Air Discharge (R_IN+, R_IN-)
Contact Discharge (R_IN+, R_IN-)
Air Discharge (R_IN+, R_IN-)
Contact Discharge (R_IN+, R_IN-)
Air Discharge (R_IN+, R_IN-)
Contact Discharge (R_IN+, R_IN-)
VALUE
±8000
±1000
±250
±30000
±10000
±30000
±10000
±30000
±10000
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
UNIT
V
5.3 Recommended Operating Conditions
Supply Voltage, V_DDA, V_DDP, V_DDL, V_DDCSI
LVCMOS Supply Voltage V_DDIO (1.8V I/O)
LVCMOS Supply Voltage V_DDIO (3.3V I/O)
Operating Free Air Temperature (T_A)
PCLK Clock Frequency
Supply Noise
V_DDn (1.8V)
V_DDIO (1.8V I/O)
V_DDIO (3.3V I/O)
MIN
NOM
MAX
UNIT
1.71
1.8
1.89
1.71
1.8
1.89
V
3.0
3.3
3.6
-40
+25
+105
°C
10
75
MHz
25
25
mV_P-P
50
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