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| OMAPL137-HT Datasheet, PDF (141/444 Pages) Texas Instruments – Multimedia Device | |||
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Public Version
OMAP4460
www.ti.com
SWPS046A â JANUARY 2012
(4) VHYS is the magnitude of the difference between the positive-going threshold voltage VT+ and the negative-going threshold voltage VTâ.
Hysteresis feature is added on the low-power received signal to reduce noise sensitivity.
(5) VITL is the voltage at which the receiver is required to detect a low state in the input signal. Specification is relaxed for detecting 0 during
Ultralow-Power (ULP) state. The low-power receiver is not required to detect high-speed, single-ended voltage as 0 in this state.
3.3.5 HDQ/1-Wire DC Electrical Characteristics
Table 3-9 summarizes the HDQ/1-Wire dc electrical characteristics in multiplexing mode 0.
NOTE
For more information on the IO cell configurations (SC[1:0]), see the Control Module /
Control Module Functional Description / Functional Register Description / Signal Integrity
Parameter Control Registers With Pad Group Assignment section of the OMAP4460 TRM.
Table 3-9. HDQ/1-Wire DC Electrical Characteristics
PARAMETER
MIN
NOM
MAX
UNIT
Signal in Mode 0: hdq_sio
(Bottom Ball: AA29)
CLOAD Load capacitance
SC[1:0] = 00
4
SC[1:0] = 01
2
60
pF
21
SC[1:0] = 10
7
33
tOT
Output transition time (rise time, tR or fall
SC[1:0] = 00
1
time, tF) measured between 10% to 90% of
PAD voltage, minimum at the minimum load
SC[1:0] = 01
0.4
and maximum at the maximum load
SC[1:0] = 10
0.6
15
ns
5
7
1.8-V Mode
VIH
VIL
VHYS(1)
VOH
VOL
Input high-level threshold
Input low-level threshold
Input hysteresis voltage
Output high-level threshold (IOH = â4 mA)
Output low-level threshold (IOL = 4 mA)
0.65 * vdds_1p8v
â0.3
150
vdds_1p8v â 0.45
vdds_1p8v + 0.3
V
0.35 * vdds_1p8v
V
mV
V
0.45
V
(1) VHYS is the magnitude of the difference between the positive-going threshold voltage VT+ and the negative-going threshold voltage VTâ.
Copyright © 2012, Texas Instruments Incorporated
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Electrical Characteristics 141
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