BQ25120A Datasheet, PDF (11/67 Pages) Texas Instruments – Low IQ Highly Integrated Battery Charge Management Solution for Wearables and IoT

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bq25120A
SLUSD08 – MAY 2017
Electrical Characteristics (continued)
Circuit of Figure 1, V_(UVLO) < V_IN < V_(OVP) and V_IN > V_(BAT) + V_(SLP), T_J = –40 to 85°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I2C INTERFACE
I²C Bus Specification
standard and fast mode
frequency support
100
400
kHz
V_IL
V_IH
V_IH
V_OL
I_BIAS
Input low threshold level V_PULLUP = 1.1 V, SDA and SCL
Input high threshold level V_PULLUP = 1.1 V, SDA and SCL
Input high threshold level V_PULLUP = 3.3 V, SDA and SCL
Output low threshold level IL = 5mA, sink current, V_PULLUP = 1.1 V
High-Level leakage
current
V_PULLUP = 1.8V, SDA and SCL
0.825
2.475
0.275
V
V
V
0.275
V
1
µA
INT, PG, and RESET OUTPUT (Open Drain)
V_OL
Low level output
threshold
Sinking current = 5 mA
0.25 x
V_(SYS)
V
I_IN
Bias current into pin
Pin is high impedance, I_OUT = 0 mA; T_J = –40°C to 60°C
12
nA
V_{IN(BAT_DELTA)}
Input voltage above
VBAT where PG sends
two 128 µs pulses each
minute to signal the host
of the input voltage status
V_UVLO < V_IN < V_OVP
0.825
1
1.15
V
INPUT PIN (CD LSCTRL)
V_{IL(/CD_LSCTRL)} Input low threshold
V_{IH(/CD_LSCTRL)}
R_PULLDOWN/CD
Input high threshold
Internal pull-down
resistance
V_(PULLUP) = V_SYS = 3.3 V
V_(PULLUP) = V_SYS = 3.3 V
0.75 *
V_SYS
0.25 *
V_SYS
V
V
900
kΩ
R_(LSCTRL)
Internal pull-down
resistance
2
MΩ
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