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| BQ25120A Datasheet, PDF (10/67 Pages) Texas Instruments – Low IQ Highly Integrated Battery Charge Management Solution for Wearables and IoT | |||
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bq25120A
SLUSD08 â MAY 2017
www.ti.com
Electrical Characteristics (continued)
Circuit of Figure 1, V(UVLO) < VIN < V(OVP) and VIN > V(BAT) + V(SLP), TJ = â40 to 85°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I(OCL_LDO)
Output Current Limit â
LDO
VLS/LDO =
275
365
475
mA
I(LS/LDO)
IIN(LDO)
Output Current
Quiescent current for
VINLS in LDO mode
OFF-state supply current
V(VINLS) = 3.6 V, VLSLDO = 3.3 V
V(VINLS) = 3.3 V, VLSLDO = 0.8 V
V(VINLS) = 2.2 V, VLSLDO = 0.8 V
100
mA
100
mA
10
mA
0.9
µA
0.25
µA
VIH(LSCTRL)
High-level input voltage
for LSCTRL
VIL(LSCTRL)
Low-level input voltage
for LSCTRL
PUSHBUTTON TIMER (MR)
1.15 V > V(VINLS) > 6.6 V
1.15 V > V(VINLS) > 6.6 V
0.75 x
V(SYS)
6.6
V
0.25 x
V(SYS)
V
VIL
Low-level input voltage
RPU
Internal pull-up resistance
VBAT MONITOR
VBAT > VBUVLO
0.3
V
120
kΩ
VBMON
Battery Voltage Monitor
Accuracy
V(BAT) Falling - Including 2% increment
â3.5
3.5
%V(BATREG)
BATTERY-PACK NTC MONITOR
VHOT
High temperature
threshold
VTS falling, 1% VIN Hysteresis
14.5
15
15.2
%VIN
VWARM
Warm temperature
threshold
VTS falling, 1% VIN Hysteresis
20.1
20.5
20.8
%VIN
VCOOL
Cool temperature
threshold
VTS rising, 1% VIN Hysteresis
35.4
36
36.4
%VIN
VCOLD
Low temperature
threshold
VTS rising, 1% VIN Hysteresis
39.3
39.8
40.2
%VIN
TSOFF
TS Disable threshold
PROTECTION
VTS rising, 2% VIN Hysteresis
55
60
%VIN
V(UVLO)
IC active threshold
voltage
VIN rising
3.4
3.6
3.8
V
VUVLO(HYS)
IC active hysteresis
VIN falling from above VUVLO
150
mV
Battery Undervoltage
Programmable Range for V(BUVLO) VBAT falling, 150 mV
Lockout threshold Range Hysteresis
2.2
3.0
V
V(BUVLO)
Default Battery
Undervoltage Lockout
Accuracy
V(BAT) falling
â2.5%
2.5%
V(BATSHORT)
Battery short circuit
threshold
Battery voltage falling
2
V
V(BATSHORT_HYS)
I(BATSHORT)
Hysteresis for V(BATSHORT)
Battery short circuit
charge current
100
mV
I(PRETERM)
mA
V(SLP)
V(SLP_HYS)
Sleep entry threshold,
VIN â V(BAT)
Sleep-mode exit
hysteresis
2 V < VBAT < V(BATREG), VIN falling
VIN rising above V(SLP)
65
120
mV
40
65
100
mV
VOVP
Maximum Input Supply
OVP threshold voltage
VIN rising, 100 mV hysteresis
5.35
5.55
5.75
V
tDGL_OVP
Deglitch time, VIN OVP
falling
VIN falling below VOVP, 1V/us
32
ms
TSHTDWN
THYS
tDGL_SHTDWN
Thermal trip
Thermal hysteresis
Deglitch time, Thermal
shutdown
VIN > VUVLO
VIN > VUVLO
TJ rising above TSHTDWN
114
°C
11
°C
4
µs
10
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Copyright © 2017, Texas Instruments Incorporated
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