LSM330D Datasheet, PDF (14/66 Pages) STMicroelectronics – Low power mode

Module specifications
LSM330D
Table 3. Mechanical characteristics (continued)
Symbol
Parameter
Test conditions
Rn Rate noise density
Top Operating temperature range
1. Typical specifications are not guaranteed.
2. Verified by wafer level test and measurement of initial offset and sensitivity.
3. Typical zero-g level offset value after MSL3 preconditioning.
4. Offset can be eliminated by enabling the built-in high-pass filter.
Min. Typ.⁽¹⁾ Max.
Unit
0.03
dps/ Hz
-40
+85
°C
2.2
Electrical characteristics
@ Vdd = 3 V, T = 25 °C unless otherwise noted
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.⁽¹⁾
Max.
Unit
Vdd
Vdd_IO
Supply voltage
Power supply for I/O
LA_Idd
Accelerometer current
consumption in Normal mode
Accelerometer current
LA_IddLowP consumption in Low power
mode
Accelerometer current
LA_IddPdn consumption in Power-down
mode
G_Idd
Gyroscope current
consumption in Normal mode
ODR = 50 Hz
ODR = 1 Hz
ODR = 50 Hz
2.4
3.6
V
1.71
Vdd+0.1
V
11
µA
2
6
µA
0.5
µA
6.1
mA
G_IddLowP
Gyroscope supply current
in Sleep mode⁽²⁾
G_IddPdn
Gyroscope current
consumption in Power-down
mode
VIH
Digital high level input voltage
VIL
Digital low level input voltage
VOH
High level output voltage
VOL
Low level output voltage
Top
Operating temperature range
2
mA
5
µA
0.8*Vdd_IO
0.9*Vdd_IO
-40
V
0.2*Vdd_IO V
V
0.1*Vdd_IO V
+85
°C
1. Typical specifications are not guaranteed.
2. Sleep mode introduces a faster turn-on time compared to Power-down mode.
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Doc ID 022562 Rev 2