SI53315 Datasheet, PDF (6/30 Pages) Silicon Laboratories – 1:10 LOW JITTER UNIVERSAL BUFFER/LEVEL

Si53315
Table 7. DC Characteristics—LVCMOS
(V_DD = 1.8 V 5%, 2.5 V  5%, or 3.3 V 10%,T_A = –40 to 85 C)
Parameter
Symbol
Output Voltage High^* V_OH
Test Condition
Output Voltage Low^*
V_OL
Min
Typ
0.8 x
—
V_DDOX
—
—
*Note: I_OH and I_OL per the Output Signal Format Table for specific V_DDOX and SFOUTX settings.
Max
—
0.2 x
V_DDOX
Unit
V
V
Table 8. DC Characteristics—HCSL
(V_DD = 1.8 V 5%, 2.5 V  5%, or 3.3 V 10%,T_A = –40 to 85 C)
Parameter
Symbol
Test Condition
Output Voltage High
V_OH
Output Voltage Low
V_OL
Single-Ended
V_SE
Output Swing
Crossing Voltage
V_C
R_L = 50 Ω to GND
R_L = 50 Ω to GND
R_L = 50 Ω to GND
R_L = 50 Ω to GND
Min
Typ
Max
Unit
550
700
850
mV
–150
0
150
mV
—
700
—
mV
250
350
550
mV
6
Preliminary Rev. 0.4