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HYB5116400BJ-50-60 Datasheet, PDF (7/26 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |||
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HYB 5116(7)400BJ-50/-60
HYB 3116(7)400BJ/BT-50/-60
4M Ã 4 DRAM
DC Characteristics (contâd)
TA = 0 to 70 °C, VSS = 0 V, tT = 2 ns
Parameter
Symbol Limit Values Unit Notes
min. max.
2k 4k
Common Parameters
Input leakage current
II(L)
(0 V ⤠VIH ⤠VCC + 0.3 V, all other pins = 0 V)
Output leakage current
IO(L)
(DO is disabled, 0 V ⤠VOUT ⤠VCC + 0.3 V)
Average VCC supply current
ICC1
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC MIN.)
Standby VCC supply current (RAS = CAS = VIH)
ICC2
Average VCC supply current, during RAS-only refresh ICC3
cycles
-50 ns version
-60 ns version
(RAS cycling, CAS = VIH, tRC = tRC MIN.)
Average VCC supply current,during fast page mode ICC4
-50 ns version
-60 ns version
(RAS = VIL, CAS, address cycling: tPC = tPC MIN.)
Standby VCC supply current
ICC5
(RAS = CAS = VCC â 0.2 V)
Average VCC supply current, during CAS-before-RAS ICC6
refresh mode
-50 ns version
-60 ns version
(RAS, CAS cycling: tRC = tRC MIN.)
â 10 10 µA 1
â 10 10 µA 1
â 80 50 mA 2, 3, 4
â 70 40 mA 2, 3, 4
â
2 mA â
â 80 50 mA 2, 4
â 70 40 mA 2, 4
â
25
mA 2, 3, 4
â
20
mA 2, 3, 4
â
1 mA 1
â 80 50 mA 2, 4
â 70 40 mA 2, 4
Semiconductor Group
7
1998-10-01
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