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| HYB5116400BJ-50-60 Datasheet, PDF (22/26 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |||
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HYB 5116(7)400BJ-50/-60
HYB 3116(7)400BJ/BT-50/-60
4M Ã 4 DRAM
RAS
CAS
Address
VIH
VIL
VIH
VIL
t ASR
VIH
VIL
t RCD
t RAD
t ASC
t RAH
Row
t WCS
t RC
t RAS
t RSH
t CAH
Column
VIH
WE
VIL
I/O
VIN
(Input) VIL
t WCH
t WP
t DS
t DH
Valid Data
I/O
VOH
(Output) VOL
"H" or "L"
Hidden Refresh Early Write Cycle
t RC
t RP
t RAS
t RP
t CHR
t CRP
t WRP
t WRH
t ASR
Row
Hi Z
SPT03035
Semiconductor Group
22
1998-10-01
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