HYB5116400BJ-50-60 Datasheet, PDF (2/26 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB 5116(7)400BJ-50/-60
HYB 3116(7)400BJ/BT-50/-60
4M × 4 DRAM
The HYB 5(3)116(7)400 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized
as 4 194 304 words by 4-bits. The HYB 5(3)116(7)400BJ/BT utilizes a submicron CMOS silicon
gate process technology, as well as advanced circuit techniques to provide wide operating margins,
both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)116(7)400
to be packaged in a standard SOJ-26/24 and TSOPII-26/24 plastic package with 300 mil width.
These packages provide high system bit densities and are compatible with commonly used
automatic testing and insertion equipment.
Ordering Information
Type
Ordering Code Package
2k-Refresh Versions
HYB 5117400BJ-50 Q67100-Q1086 P-SOJ-26/24-1 300 mil
HYB 5117400BJ-60 Q67100-Q1087 P-SOJ-26/24-1 300 mil
HYB 3117400BJ-50 on request
P-SOJ-26/24-1 300 mil
HYB 3117400BJ-60 on request
P-SOJ-26/24-1 300 mil
4k-Refresh Versions
HYB 5116400BJ-50 Q67100-Q1049 P-SOJ-26/24-1 300 mil
HYB 5116400BJ-60 Q67100-Q1050 P-SOJ-26/24-1 300 mil
HYB 3116400BJ-50 on request
P-SOJ-26/24-1 300 mil
HYB 3116400BJ-60 on request
P-SOJ-26/24-1 300 mil
HYB 3116400BT-50 on request
P-TSOPII-26/24-1 300 mil
HYB 3116400BT-60 on request
P-TSOPII-26/24-1 300 mil
Descriptions
5 V 50 ns FPM-DRAM
5 V 60 ns FPM-DRAM
3.3 V 50 ns FPM-DRAM
3.3 V 60 ns FPM-DRAM
5 V 50 ns FPM-DRAM
5 V 60 ns FPM-DRAM
3.3 V 50 ns FPM-DRAM
3.3 V 60 ns FPM-DRAM
3.3 V 50 ns FPM-DRAM
3.3 V 60 ns FPM-DRAM
Semiconductor Group
2
1998-10-01