HYB5116400BJ-50-60 Datasheet, PDF (1/26 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

4M × 4-Bit Dynamic RAM
2k & 4k Refresh
(Fast Page Mode)
Advanced Information
• 4 194 304 words by 4-bit organization
• 0 to 70 °C operating temperature
• Fast Page Mode operation
• Performance:
t_RAC RAS access time
t_CAC CAS access time
t_AA Access time from address
t_RC Read/Write cycle time
t_PC Fast page mode cycle time
-50 -60
50 60 ns
13 15 ns
25 30 ns
84 104 ns
35 40 ns
HYB 5116400BJ-50/-60
HYB 5117400BJ-50/-60
HYB 3116400BJ/BT-50/-60
HYB 3117400BJ-50/-60
• Power Dissipation, Refresh & Addressing:
Power Supply
Addressing
Refresh
Active
TTL Standby
CMOS Standby
HYB 5116400 HYB 3116400
-50 -60 -50 -60
5 V ± 10% 3.3 V ± 0.3 V
12/10
12/10
4096 cycles / 64 ms
275 220 180 144
11
7.2
5.5
3.6
HYB 5117400 HYB 3117400
-50 -60 -50 -60
5 V ± 10% 3.3 V ± 0.3 V
11/11
11/11
2048 cycles / 32 ms
440 385 288 252 mW
11
7.2
mW
5.5
3.6
mW
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh
and test mode
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
Semiconductor Group
1
1998-10-01