HYB5116400BJ-50-60 Datasheet, PDF (6/26 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB 5116(7)400BJ-50/-60
HYB 3116(7)400BJ/BT-50/-60
4M × 4 DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70 °C
Storage temperature range........................................................................................ – 55 to 150 °C
Input/output voltage (5 V versions) ................................................... – 0.5 to min (V_CC + 0.5, 7.0) V
Input/output voltage (3.3 V versions) ................................................ – 0.5 to min (V_CC + 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... – 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... – 1.0 V to 4.6 V
Power dissipation( 5 V versions) ............................................................................................. 1.0 W
Power dissipation (3.3 V versions) .......................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T_A = 0 to 70 °C, V_SS = 0 V, t_T = 2 ns
Parameter
5 V Versions
Power supply voltage
Input high voltage
Input low voltage
Output high voltage (I_OUT = – 5 mA)
Output low voltage (I_OUT = 4.2 mA)
3.3 V Versions
Power supply voltage
Input high voltage
Input low voltage
TTL Output high voltage (I_OUT = – 2 mA)
TTL Output low voltage (I_OUT = 2 mA)
CMOS Output high voltage (I_OUT = – 100 µA)
CMOS Output low voltage (I_OUT = 100 µA)
Symbol Limit Values
min.
max.
Unit Test
Condition
V_CC
4.5
5.5
V
V_IH
2.4
V_CC + 0.5 V ¹
V_IL
– 0.5 0.8
V
1
V_OH
2.4
–
V
1
V_OL
–
0.4
V
1
V_CC
3.0
3.6
V
V_IH
2.0
V_CC + 0.5 V ¹
V_IL
– 0.5 0.8
V
1
V_OH
2.4
–
V
1
V_OL
–
0.4
V
1
V_OH
V_CC – 0.2 –
V
V_OL
–
0.2
V
Semiconductor Group
6
1998-10-01