HYB5116400BJ-50-60 Datasheet, PDF (17/26 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB 5116(7)400BJ-50/-60
HYB 3116(7)400BJ/BT-50/-60
4M × 4 DRAM
RAS
CAS
V_IH
V_IL
V_IH
V_IL
t _ASR
t _RCD
t _PC
t _CAS
t _RAH
t _ASC
t _CAH
V_IH
Address
V_IL
Row
Column
t _RAD
t _WCS
t _CWL
V_IH
WE
V_IL
t _WCH
t _WP
t _RASP
t _CAS
t _CP
t _ASC ^{t CAH}
Column
t _WCS
t _CWL
t _WCH
t _WP
V_IH
OE
V_IL
I/O
V_IH
(Inputs) _VIL
I/O
V_OH
(Outputs) _VOL
t _DS
t _DH
Valid
Data IN
t _DS
t _DH
Valid
Data IN
Hi Z
t _RSH
t _CAS
t _RAL
t _CAH
t _ASC
Column
t _WCS
t _RWL
t _CWL
t _WCH
t _WP
t _DS
t _DH
Valid
Data IN
t _RP
t _CRP
t _ASR
Row
"H" or "L"
SPT03030
Fast Page Mode Early Write Cycle
Semiconductor Group
17
1998-10-01