HYB5116400BJ-50-60 Datasheet, PDF (3/26 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB 5116(7)400BJ-50/-60
HYB 3116(7)400BJ/BT-50/-60
4M × 4 DRAM
Pin Names
Row Address Inputs
Column Address Inputs
Row Address Strobe
Column Address Strobe
Output Enable
Data Input/Output
Read/Write Input
Power Supply
Ground (0 V)
Not Connected
Pin Configuration
HYB 5(3)116400
4k-Refresh
HYB 5(3)117400
2k-Refresh
A0 - A11
A0 - A10
A0 - A9
A0 - A10
RAS
CAS
OE
I/O1 - I/O4
WE
V_CC
V_SS
–
N.C.
P-SOJ-26/24-1 300 mil
P-TSOPII-26/24-1 300 mil
V_{CC 1}
I/O1 2
I/O2 3
WE 4
RAS 5
A11 / N.C. 6
A10 8
A0 9
A1 10
A2 11
A3 12
V_{CC 13}
26 ^V_SS
25 I/O4
24 I/O3
23 CAS
22 OE
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 ^V_SS
SPP03454
Semiconductor Group
3
1998-10-01