HYB5116400BJ-50-60 Datasheet, PDF (14/26 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB 5116(7)400BJ-50/-60
HYB 3116(7)400BJ/BT-50/-60
4M × 4 DRAM
V_IH
RAS
V_IL
V_IH
CAS
V_IL
V_IH
Address
V_IL
V_IH
WE
V_IL
V_IH
OE
V_IL
I/O
V_IH
(Inputs) _VIL
I/O
V_OH
(Outputs) _VOL
t _RC
t _RAS
t _RCD
t _CSH
t _RSH
t _CAS
t _ASR
t _RAD
t _ASC
Row
t _RAH
t _RAL
t _CAH
Column
t _CWL
t _RWL
t _WP
t _OEH
t _DZO
t _DZC
t _ODD
t _DH
t_DS
Valid Data
t _CLZ ^{t OEZ}
t _OEA
Hi Z
"H" or "L"
Write Cycle (OE Controlled Write)
t _RP
t _CRP
t _ASR
Row
Hi Z
SPT03027
Semiconductor Group
14
1998-10-01