HYB5116405BJ-50- Datasheet, PDF (6/28 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M × 4 EDO-DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70 ˚C
Storage temperature range........................................................................................ – 55 to 150 ˚C
Input/output voltage (5 V versions) ................................................... – 0.5 to min (V_CC + 0.5, 7.0) V
Input/output voltage (3.3 V versions) ................................................ – 0.5 to min (V_CC + 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... – 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... – 1.0 V to 4.6 V
Power dissipation (5 V versions) ............................................................................................ 1.0 W
Power dissipation (3.3 V versions) ......................................................................................... 0.5 W
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T_A = 0 to 70 °C, V_SS = 0 V, t_T = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Unit Test
Condition
5 V Versions
Power supply voltage
Input high voltage
Input low voltage
Output high voltage (I_OUT = – 5 mA)
Output low voltage (I_OUT = 4.2 mA)
3.3 V Versions
V_CC
4.5
5.5
V
V_IH
2.4
V_CC + 0.5 V ¹
V_IL
– 0.5
0.8
V
1
V_OH
2.4
–
V
1
V_OL
–
0.4
V
1
Power supply voltage
V_CC
Input high voltage
V_IH
Input low voltage
V_IL
TTL Output high voltage (I_OUT = – 2 mA)
V_OH
TTL Output low voltage (I_OUT = 2 mA)
V_OL
CMOS Output high voltage (I_OUT = – 100 µA) V_OH
CMOS Output low voltage (I_OUT = 100 µA) V_OL
3.0
3.6
V
2.0
– 0.5
V_CC + 0.5 V ¹
0.8
V
1
2.4
–
V
1
–
0.4
V
1
V_CC – 0.2 –
V
–
0.2
V
Semiconductor Group
6
1998-10-01