HYB5116405BJ-50- Datasheet, PDF (17/28 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M × 4 EDO-DRAM
RAS
CAS
V_IH
V_IL
t _CRP
V_IH
V_IL
t _ASR
t _RCD
t _HPC
t _CAS
t _CSH
t _RAH
t _CAH
t _ASC
V_IH
Address
V_IL
V_IH
WE
V_IL
Row
Column 1
t _RAD
t _RCS
V_IH
OE
V_IL
I/O
V_OH
(Output) _VOL
t _OES
t _OEA
t _RAC
t _AA
t _CAC
t _CLZ
t _RAS
t _CP
t _CAS
t _ASC
t _CAH
Column 2
t _CAC
t _AA
t _CPA
t _COH
Data OUT 1
t _RHCP
t _RSH
t _CAS
t _RP
t _CRP
t _RAL
t _CAH
t _ASC
Column N
t _RRH
t _RCH
t _CAC
t _AA
t _CPA
t _OFF
t _COH
Data OUT 2
t _OEZ
Data OUT N
"H" or "L"
SPT03038
Hyper Page Mode (EDO) Read Cycle
Semiconductor Group
17
1998-10-01