HYB5116405BJ-50- Datasheet, PDF (14/28 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M × 4 EDO-DRAM
V_IH
RAS
V_IL
V_IH
CAS
V_IL
V_IH
Address
V_IL
V_IH
WE
V_IL
V_IH
OE
V_IL
I/O
V_IH
(Inputs) _VIL
I/O
V_OH
(Outputs) _VOL
t _RC
t _RAS
t _RCD
t _CSH
t _RSH
t _CAS
t _ASR
t _RAD
t _ASC
Row
t _RAH
t _WCS
t _RAL
t _CAH
Column
t _CWL
t _WP
t _WCH
t _RWL
t _DS
t _DH
Valid Data IN
Hi Z
"H" or "L"
Write Cycle (Early Write)
t _RP
t _CRP
t _ASR
Row
SPT03026
Semiconductor Group
14
1998-10-01