HYB5116405BJ-50- Datasheet, PDF (11/28 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M × 4 EDO-DRAM
AC Characteristics (cont’d) ^{5, 6}
T_A = 0 to 70 °C, V_CC = 5 V ± 10 % / V_CC = 3.3 V ± 0.3 V, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
Test Mode
Write command setup time
Write command hold time
CAS hold time
RAS hold time in test mode
t_WTS
10 –
10 –
ns
t_WTH
10 –
10 –
ns
t_CHRT
30 –
30 –
ns
t_RAHT
30 –
30 –
ns
Semiconductor Group
11
1998-10-01