HYB5116405BJ-50- Datasheet, PDF (2/28 Pages) Siemens Semiconductor Group – 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M × 4 EDO-DRAM
The HYB 5(3)116(7)405 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized
as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon
gate process technology, as well as advanced circuit techniques to provide wide operating margins,
both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)116(7)405
to be packaged in a standard SOJ-26/24 and TSOPII-26/24 plastic package with 300 mil width.
These packages provide high system bit densities and are compatible with commonly used
automatic testing and insertion equipment. The HYB 3116(7)405BTL have a very low power “sleep
mode” supported by Self Refresh.
Ordering Information
Type
Ordering Code Package
Descriptions
2k-Refresh Versions:
HYB 5117405BJ-50 Q67100-Q1101 P-SOJ-26/24-1 300 mil 5 V 50 ns EDO-DRAM
HYB 5117405BJ-60 Q67100-Q1102 P-SOJ-26/24-1 300 mil 5 V 60 ns EDO-DRAM
HYB 3117405BJ-50 on request
P-SOJ-26/24-1 300 mil 3.3 V 50 ns EDO-DRAM
HYB 3117405BJ-60 on request
P-SOJ-26/24-1 300 mil 3.3 V 60 ns EDO-DRAM
HYB 3117405BT-50 on request
P-TSOPII-26/24-1 300 mil 3.3 V 50 ns EDO-DRAM
HYB 3117405BT-60 on request
P-TSOPII-26/24-1 300 mil 3.3 V 60 ns EDO-DRAM
4k-Refresh Versions:
HYB 5116405BJ-50 Q67100-Q1098 P-SOJ-26/24-1 300 mil 5 V 50 ns EDO-DRAM
HYB 5116405BJ-60 Q67100-Q1099 P-SOJ-26/24-1 300 mil 5 V 60 ns EDO-DRAM
HYB 3116405BJ-50 on request
P-SOJ-26/24-1 300 mil 3.3 V 50 ns EDO-DRAM
HYB 3116405BJ-60 on request
P-SOJ-26/24-1 300 mil 3.3 V 60 ns EDO-DRAM
HYB 3116405BT-50 on request
P-TSOPII-26/24-1 300 mil 3.3 V 50 ns EDO-DRAM
HYB 3116405BT-60 on request
P-TSOPII-26/24-1 300 mil 3.3 V 60 ns EDO-DRAM
HYB 3116405BTL-50 on request
P-TSOPII-26/24-1 300 mil 3.3 V 50 ns LP-EDO-DRAM
HYB 3116405BTL-60 on request
P-TSOPII-26/24-1 300 mil 3.3 V 60 ns LP-EDO-DRAM
Semiconductor Group
2
1998-10-01