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K4B1G0446G Datasheet, PDF (60/64 Pages) Samsung semiconductor – 1Gb G-die DDR3 SDRAM
◁
K4B1G0446G
K4B1G0846G
datasheet
Rev. 1.01
DDR3 SDRAM
[ Table 59 ] Derating values for DDR3-1866 tDS/tDH - (AC135)
∆tDS, ∆tDH Derating in [ps] AC/DC based1
DQS,DQS Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH
2.0 68
50
68
50
68
50
-
-
-
-
-
-
1.5 45
34
45
34
45
34
53
42
-
-
-
-
1.0 0
0
0
0
0
0
8
8
16
16
-
-
DQ
Slew
rate
0.9
0.8
-
-
-
-
2
-4
2
-4
10
4
18
12
26
20
-
-
3
-10
11
-2
19
6
27
14
V/ns 0.7
-
-
-
-
-
-
14
-8
22
0
30
8
0.6 -
-
-
-
-
-
-
-
25 -10 33
-2
0.5 -
-
-
-
-
-
-
-
-
-
29 -16
0.4 -
-
-
-
-
-
-
-
-
-
-
-
NOTE : 1. Cell contents shaded in red are defined as ’not supported’.
1.2V/ns
∆tDS ∆tDH
-
-
-
-
-
-
-
-
35
24
38
18
41
8
37
-6
30 -26
1.0V/ns
∆tDS ∆tDH
-
-
-
-
-
-
-
-
-
-
46
34
49
24
45
10
38 -10
[ Table 60 ] Required time tVAC above VIH(AC) {blow VIL(AC)} for valid transition
Slew Rate[V/ns]
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
<0.5
tVAC[ps] DDR3-1066
(AC175)
min
max
75
-
57
-
50
-
38
-
34
-
29
-
22
-
13
-
0
-
0
-
tVAC[ps] DDR3-1066/1333/1600
(AC150)
min
max
175
-
170
-
167
-
163
-
162
-
161
-
159
-
155
-
155
-
150
-
tVAC[ps] DDR3-1866
(AC135)
min
max
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
- 60 -
 ▷