K4B1G0446G Datasheet, PDF (21/64 Pages) Samsung semiconductor – 1Gb G-die DDR3 SDRAM

K4B1G0446G
K4B1G0846G
datasheet
Rev. 1.01
DDR3 SDRAM
9.7.1 Output Drive Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to Table 23 and Table 24.
∆T = T - T(@calibration); ∆V = V_DDQ - V_DDQ (@calibration); V_DD = V_DDQ
*dR_ONdT and dR_ONdV are not subject to production test but are verified by design and characterization
[ Table 23 ] Output Driver Sensitivity Definition
Min
RONPU@V_OHDC
0.6 - dR_ONdTH * |∆T| - dR_ONdVH * |∆V|
RON@V_OMDC
RONPD@_VOLDC
0.9 - dR_ONdTM * |∆T| - dR_ONdVM * |∆V|
0.6 - dR_ONdTL * |∆T| - dR_ONdVL * |∆V|
Max
1.1 + dR_ONdTH * |∆T| + dR_ONdVH * |∆V|
1.1 + dR_ONdTM * |∆T| + dR_ONdVM * |∆V|
1.1 + dR_ONdTL * |∆T| + dR_ONdVL * |∆V|
[ Table 24 ] Output Driver Voltage and Temperature Sensitivity
Speed Bin
DDR3-800/1066/1333
Min
Max
dR_ONdTM
dR_ONdVM
dR_ONdTL
dR_ONdVL
dR_ONdTH
dR_ONdVH
0
1.5
0
0.15
0
1.5
0
0.15
0
1.5
0
0.15
DDR3-1600/1866
Min
Max
0
1.5
0
0.13
0
1.5
0
0.13
0
1.5
0
0.13
Units
RZQ/7
RZQ/7
RZQ/7
Units
%/°C
%/mV
%/°C
%/mV
%/°C
%/mV
9.8 On-Die Termination (ODT) Levels and I-V Characteristics
On-Die Termination effective resistance RTT is defined by bits A9, A6 and A2 of MR1 register.
ODT is applied to the DQ,DM, DQS/DQS and TDQS,TDQS (x8 devices only) pins.
A functional representation of the on-die termination is shown below. The individual pull-up and pull-down resistors (RTTpu and RTTpd) are defined as
follows :
RTTpu =
RTTpd =
V_DDQ-V_OUT
l Iout l
V_OUT
l Iout l
under the condition that RTTpd is turned off
under the condition that RTTpu is turned off
To
other
circuitry
like
RCV,
...
Chip in Termination Mode
ODT
V_DDQ
Ipu
RTT
Pu
RTT
Pd
Ipd
Iout=Ipd-Ipu
DQ
Iout
V_OUT
V_SSQ
Figure 12. On-Die Termination : Definition of Voltages and Currents
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