K4B1G0446G Datasheet, PDF (19/64 Pages) Samsung semiconductor – 1Gb G-die DDR3 SDRAM

K4B1G0446G
K4B1G0846G
datasheet
Rev. 1.01
DDR3 SDRAM
9.6 Overshoot/Undershoot Specification
9.6.1 Address and Control Overshoot and Undershoot specifications
[ Table 20 ] AC overshoot/undershoot specification for Address and Control pins (A0-A12, BA0-BA2. CS. RAS. CAS. WE. CKE, ODT)
Parameter
Specification
Unit
DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866
Maximum peak amplitude allowed for overshoot area (See Figure 9)
0.4V
0.4V
0.4V
0.4V
0.4V
V
Maximum peak amplitude allowed for undershoot area (See Figure 9) 0.4V
0.4V
0.4V
0.4V
0.4V
V
Maximum overshoot area above V_DD (See Figure 9)
0.67V-ns
0.5V-ns
0.4V-ns
0.33V-ns
0.28V-ns V-ns
Maximum undershoot area below V_SS (See Figure 9)
0.67V-ns
0.5V-ns
0.4V-ns
0.33V-ns
0.28V-ns V-ns
Maximum Amplitude
Overshoot Area
Volts ^VDD
(V)
V_SS
Maximum Amplitude
Time (ns)
Undershoot Area
Figure 9. Address and Control Overshoot and Undershoot Definition
9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications
[ Table 21 ] AC overshoot/undershoot specification for Clock, Data, Strobe and Mask (DQ, DQS, DQS, DM, CK, CK)
Parameter
Specification
Unit
DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866
Maximum peak amplitude allowed for overshoot area (See Figure 10)
0.4V
0.4V
0.4V
0.4V
0.4V
V
Maximum peak amplitude allowed for undershoot area (See Figure 10) 0.4V
0.4V
0.4V
0.4V
0.4V
V
Maximum overshoot area above V_DDQ (See Figure 10)
Maximum undershoot area below V_SSQ (See Figure 10)
0.25V-ns
0.25V-ns
0.19V-ns
0.19V-ns
0.15V-ns
0.15V-ns
0.13V-ns
0.13V-ns
0.11V-ns
0.11V-ns
V-ns
V-ns
Maximum Amplitude
Overshoot Area
Volts
(V)
V_DDQ
V_SSQ
Maximum Amplitude
Time (ns)
Undershoot Area
Figure 10. Clock, Data, Strobe and Mask Overshoot and Undershoot Definition
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