K4B1G0446G Datasheet, PDF (25/64 Pages) Samsung semiconductor – 1Gb G-die DDR3 SDRAM

K4B1G0446G
K4B1G0846G
datasheet
Begin point : Rising edge of CK - CK
defined by the end point of ODTLon
CK
V_TT
CK
t_AON
DQ, DM
DQS , DQS
TDQS , TDQS
V_SSQ
T_SW2
T_SW1
V_SW1
V_SW2
End point Extrapolated point at V_SSQ
V_SSQ
Figure 14. Definition of tAON
Begin point : Rising edge of CK - CK
with ODT being first registered high
CK
V_TT
CK
t_AONPD
DQ, DM
DQS , DQS
TDQS , TDQS
V_SSQ
T_SW2
T_SW1
V_SW1
V_SW2
End point Extrapolated point at V_SSQ
V_SSQ
Figure 15. Definition of tAONPD
Begin point : Rising edge of CK - CK
defined by the end point of ODTLoff
CK
CK
V_{RTT_Nom}
DQ, DM
DQS , DQS
TDQS , TDQS
V_SW2
t_AOF
End point Extrapolated point at V_{RTT_Nom}
V_SW1
T_SW2
T_SW1
V_TT
V_SSQ
TD_TAON_DEF
Figure 16. Definition of tAOF
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Rev. 1.01
DDR3 SDRAM