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| K4B1G0446G Datasheet, PDF (58/64 Pages) Samsung semiconductor – 1Gb G-die DDR3 SDRAM | |||
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K4B1G0446G
K4B1G0846G
datasheet
Rev. 1.01
DDR3 SDRAM
NOTE :Clock and Strobe are drawn on a different time scale.
tIS
tIH
CK
CK
DQS
DQS
VDDQ
tDS tDH
VIH(AC) min
VIH(DC) min
dc to VREF
region
VREF(DC)
dc to VREF
region
VIL(DC) max
tangent
line
VIL(AC) max
tIS tIH
tDS tDH
nominal
line
tangent
line
nominal
line
VSS
â TR
â TF
Hold Slew Rate
Rising Signal
=
tangent line [ VREF(DC) - VIL(DC)max ]
â TR
Hold Slew Rate
Falling Signal
=
tangent line [ VIH(DC)min - VREF(DC) ]
â TF
Figure 24. Illustration of tangent line for hold time tDH (for DQ with respect to strobe) and tIH
(for ADD/CMD with respect to clock)
- 58 -
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