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K4B1G0446G Datasheet, PDF (54/64 Pages) Samsung semiconductor – 1Gb G-die DDR3 SDRAM
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K4B1G0446G
K4B1G0846G
datasheet
Rev. 1.01
DDR3 SDRAM
[ Table 54 ] Derating values DDR3-1866 tIS/tIH-AC/DC based - Alternate AC125 Threshold
∆tIS, ∆tIH Derating [ps] AC/DC based
Alternate AC125 Threshold -> VIH(AC) = VREF(DC) + 125mV, VIL(AC) = VREF(DC) - 125mV
CLK,CLK Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH
2.0
63
50
63
50
63
50
71
58
79
66
87
74
95
84
1.5
42
34
42
34
42
34
50
42
58
50
66
58
74
68
1.0
0
0
0
0
0
0
8
8
16
16
24
24
32
34
CMD/
ADD 0.9
4
-4
4
-4
4
-4
12
4
20
12
28
20
36
30
Slew 0.8
6
-10
6
-10
6
-10 14
-2
22
6
30
14
38
24
rate 0.7
11
-16
11
-16
11
-16
19
-8
27
0
35
8
43
18
V/ns
0.6 16 -26 16 -26 16 -26 24 -18 32 -10 40
-2
48
8
0.5 15 -40 15 -40 15 -40 23 -32 31 -24 39 -16 47
-6
0.4 13 -60 13 -60 13 -60 21 -52 29 -44 37 -36 45 -26
1.0V/ns
∆tIS ∆tIH
103 100
82
84
40
50
44
46
46
40
51
34
56
24
55
10
53 -10
[ Table 55 ] Required time tVAC above VIH(AC) {blow VIL(AC)} for valid transition
Slew Rate[V/ns]
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
< 0.5
tVAC @175mV [ps]
min
max
75
-
57
-
50
-
38
-
34
-
29
-
22
-
13
-
0
-
0
-
tVAC @150mV [ps]
min
max
175
-
170
-
167
-
163
-
162
-
161
-
159
-
155
-
150
-
150
-
tVAC @135mV [ps]
min
max
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
tVAC @125mV [ps]
min
max
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
TBD
-
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