K4B1G0446G Datasheet, PDF (39/64 Pages) Samsung semiconductor – 1Gb G-die DDR3 SDRAM

K4B1G0446G
K4B1G0846G
datasheet
Rev. 1.01
DDR3 SDRAM
13.2 Refresh Parameters by Device Density
[ Table 42 ] Refresh parameters by device density
Parameter
Symbol
1Gb
2Gb
4Gb
8Gb
Units NOTE
All Bank Refresh to active/refresh cmd time
tRFC
110
160
300
350
ns
Average periodic refresh interval
0 °C ≤ T_CASE ≤ 85°C
7.8
7.8
7.8
7.8
µs
tREFI
85 °C < T_CASE ≤ 95°C
3.9
3.9
3.9
3.9
µs
1
NOTE :
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or requirements referred to in
this material.
13.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin
DDR3 SDRAM Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
[ Table 43 ] DDR3-800 Speed Bins
Speed
DDR3-800
CL-nRCD-nRP
6-6-6
Parameter
Symbol
min
max
Internal read command to first data
tAA
15
20
ACT to internal read or write delay time
tRCD
15
-
PRE command period
tRP
15
-
ACT to ACT or REF command period
tRC
52.5
-
ACT to PRE command period
tRAS
37.5
9*tREFI
CL = 5
CWL = 5
tCK(AVG)
3.0
3.3
CL = 6
CWL = 5
tCK(AVG)
2.5
3.3
Supported CL Settings
5,6
Supported CWL Settings
5
[ Table 44 ] DR3-1066 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Internal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 5
CL = 6
CL = 7
CL = 8
Supported CL Settings
Supported CWL Settings
CWL = 5
CWL = 6
CWL = 5
CWL = 6
CWL = 5
CWL = 6
CWL = 5
CWL = 6
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
min
13.125
13.125
13.125
50.625
37.5
DDR3-1066
7-7-7
max
20
-
-
-
9*tREFI
3.0
3.3
2.5
1.875
1.875
Reserved
Reserved
Reserved
Reserved
5,6,7,8
5,6
3.3
<2.5
<2.5
Units
ns
ns
ns
ns
ns
ns
ns
nCK
nCK
NOTE
1,2,3,4,10,11
1,2,3
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nCK
nCK
NOTE
1,2,3,4,5,10,
11
4
1,2,3,5
1,2,3,4
4
1,2,3,4,9
4
1,2,3
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