K4B1G0446G Datasheet, PDF (42/64 Pages) Samsung semiconductor – 1Gb G-die DDR3 SDRAM

K4B1G0446G
K4B1G0846G
datasheet
[ Table 47 ] DDR3-1866 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Internal read command to first data
Symbol
tAA
ACT to internal read or write delay time
tRCD
PRE command period
tRP
ACT to ACT or REF command period
ACT to PRE command period
CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
CL = 11
CL = 12
CL = 13
Supported CL Settings
Supported CWL Settings
CWL = 5
CWL = 6,7,8,9
CWL = 5
CWL = 6
CWL = 7,8,9
CWL = 5
CWL = 6
CWL = 7,8,9
CWL = 5
CWL = 6
CWL = 7
CWL = 8,9
CWL = 5,6
CWL = 7
CWL = 8
CWL = 9
CWL = 5,6
CWL = 7
CWL = 8
CWL = 5,6,7
CWL = 8
CWL = 9
CWL = 5,6,7,8
CWL = 9
CWL = 5,6,7,8
CWL = 9
tRC
tRAS
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
DDR3-1866
13-13-13
min
13.91
(13.125)¹²
13.91
(13.125)¹²
13.91
(13.125)¹²
47.91
(47.125)¹²
34
max
20
-
-
-
9*tREFI
3.0
3.3
Reserved
2.5
3.3
Reserved
Reserved
Reserved
1.875
2.5
Reserved
Reserved
1.875
<2.5
Reserved
Reserved
Reserved
1.5
1.875
Reserved
Reserved
Reserved
1.5
<1.875
Reserved
Reserved
1.25
1.5
Reserved
Reserved
Reserved
Reserved
1.07
<1.25
5,6,7,8,9,10,11,13
5,6,7,8,9
Rev. 1.01
DDR3 SDRAM
Units
NOTE
ns
ns
ns
ns
ns
ns
1,2,3,4,8,10,
11
ns
4
ns
1,2,3,8
ns
1,2,3,4,8
ns
4
ns
4
ns
1,2,3,4,8
ns
4
ns
4
ns
1,2,3,8
ns
1,2,3,4,8
ns
4
ns
4
ns
1,2,3,4,8
ns
4
ns
4
ns
4
ns
1,2,3,8
ns
1,2,3,4,8
ns
4
ns
1,2,3,4,8
ns
1,2,3,4
ns
4
ns
1,2,3,4
ns
4
ns
1,2,3,9
nCK
nCK
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