K4B1G0446G Datasheet, PDF (28/64 Pages) Samsung semiconductor – 1Gb G-die DDR3 SDRAM

K4B1G0446G
K4B1G0846G
datasheet
Rev. 1.01
DDR3 SDRAM
I_DD
I_DDQ
V_DD
RESET
CK/CK
CKE
CS
RAS, CAS, WE
A, BA
ODT
ZQ
V_SS
V_DDQ
DQS, DQS
DQ, DM,
TDQS, TDQS
R_TT = 25 Ohm
V_DDQ/2
V_SSQ
[NOTE : DIMM level Output test load condition may be different from above]
Figure 19. Measurement Setup and Test Load for IDD and IDDQ Measurements
Application specific
memory channel
environment
Channel
IO Power
Simulation
IDDQ
Test Load
IDDQ
Simulation
IDDQ
Measurement
Correlation
Correction
Channel IO Power
Number
Figure 20. Correlation from simulated Channel IO Power to actual Channel IO Power supported by IDDQ Measurement.
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