K4B4G0446B Datasheet, PDF (41/59 Pages) Samsung semiconductor – DDP 4Gb B-die DDR3 SDRAM Specification

K4B4G0446B
K4B4G0846B
[ Table 45 ] DDR3-1333 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6
CWL = 5
CWL = 6
CWL = 7
CWL = 5
CL = 7
CWL = 6
CL = 8
CL = 9
CL = 10
CWL = 7
CWL = 5
CWL = 6
CWL = 7
CWL = 5,6
CWL = 7
CWL = 5,6
CWL = 7
Supported CL Settings
Supported CWL Settings
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
DDP 4Gb DDR3 SDRAM
DDR3-1333
9 -9 - 9
min
max
13.5
(13.125)^5,9
20
13.5
(13.125)^5,9
-
13.5
(13.125)^5,9
-
49.5
(49.125)^5,9
-
36
9*tREFI
2.5
3.3
Reserved
Reserved
Reserved
1.875
<2.5
(Optional) Note 5,9
Reserved
Reserved
1.875
<2.5
Reserved
Reserved
1.5
<1.875
Reserved
1.5
<1.875
(Optional)
6,7,8,9
5,6,7
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nCK
nCK
Note
8
1,2,3,7
1,2,3,4,7
4
4
1,2,3,4,7
1,2,3,4,
4
1,2,3,7
1,2,3,4,
4
1,2,3,4
4
1,2,3
5
Page 41 of 59
Rev. 1.0 March 2009