K4B4G0446B Datasheet, PDF (26/59 Pages) Samsung semiconductor – DDP 4Gb B-die DDR3 SDRAM Specification

K4B4G0446B
K4B4G0846B
DDP 4Gb DDR3 SDRAM
Begin point : Rising edge of CK - CK
defined by the end point of ODTLon
CK
CK
DQ, DM
DQS , DQS
TDQS , TDQS
V_SSQ
Figure 14. Definition of tAON
t_AON
T_SW2
T_SW1
V_SW1
V_SW2
End point Extrapolated point at V_SSQ
Begin point : Rising edge of CK - CK
with ODT being first registered high
CK
CK
DQ, DM
DQS , DQS
TDQS , TDQS
V_SSQ
Figure 15. Definition of tAONPD
t_AONPD
T_SW2
T_SW1
V_SW1
V_SW2
End point Extrapolated point at V_SSQ
V_TT
V_SSQ
V_TT
V_SSQ
Begin point : Rising edge of CK - CK
defined by the end point of ODTLoff
CK
CK
V_{RTT_Nom}
DQ, DM
DQS , DQS
TDQS , TDQS
V_SW2
t_AOF
End point Extrapolated point at V_{RTT_Nom}
V_SW1
T_SW2
T_SW1
V_TT
V_SSQ
Figure 16. Definition of tAOF
TD_TAON_DEF
Page 26 of 59
Rev. 1.0 March 2009