K4B4G0446B Datasheet, PDF (40/59 Pages) Samsung semiconductor – DDP 4Gb B-die DDR3 SDRAM Specification

K4B4G0446B
K4B4G0846B
DDP 4Gb DDR3 SDRAM
13.2 Refresh Parameters by Device Density
[ Table 42 ] Refresh parameters by device density
Parameter
Symbol
1Gb
2Gb
4Gb
8Gb
Units Note
All Bank Refresh to active/refresh cmd time
tRFC
110
160
300
350
ns
Average periodic refresh interval
0 °C ≤ T_CASE ≤ 85°C
7.8
7.8
7.8
7.8
µs
tREFI
85 °C < T_CASE ≤ 95°C
3.9
3.9
3.9
3.9
µs
1
Note :
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or
requirements referred to in this material.
13.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin
DDR3 SDRAM Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
[ Table 43 ] DDR3-800 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6 / CWL = 5
Supported CL Settings
Supported CWL Settings
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(AVG)
DDR3-800
6-6-6
min
max
15
20
15
-
15
-
52.5
-
37.5
9*tREFI
2.5
3.3
6
5
[ Table 44 ] DDR3-1066 Speed Bins
Speed
CL-nRCD-nRP
Parameter
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6
CWL = 5
CWL = 6
CL = 7
CWL = 5
CWL = 6
CL = 8
CWL = 5
CWL = 6
Supported CL Settings
Supported CWL Settings
Symbol
tAA
tRCD
tRP
tRC
tRAS
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
min
13.125
13.125
13.125
50.625
37.5
2.5
1.875
1.875
DDR3-1066
7-7-7
Reserved
Reserved
Reserved
6,7,8
5,6
max
20
-
-
-
9*tREFI
3.3
<2.5
<2.5
Units
ns
ns
ns
ns
ns
ns
nCK
nCK
Note
8
1,2,3
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nCK
nCK
Note
8
1,2,3,6
1,2,3,4
4
1,2,3,4
4
1,2,3
Page 40 of 59
Rev. 1.0 March 2009