K4B4G0446B Datasheet, PDF (27/59 Pages) Samsung semiconductor – DDP 4Gb B-die DDR3 SDRAM Specification

K4B4G0446B
K4B4G0846B
DDP 4Gb DDR3 SDRAM
Begin point : Rising edge of CK - CK
with ODT being first registered low
CK
CK
V_{RTT_Nom}
DQ, DM
DQS , DQS
TDQS , TDQS
V_SW2
t_AOFPD
End point Extrapolated point at V_{RTT_Nom}
V_SW1
T_SW2
T_SW1
V_TT
V_SSQ
Figure 17. Definition of tAOFPD
Begin point : Rising edge of CK - CK
defined by the end point of ODTLcnw
Begin point : Rising edge of CK - CK defined by
the end point of ODTLcwn4 or ODTLcwn8
CK
V_TT
CK
V_{RTT_Nom}
t_ADC
End point Extrapolated point at V_{RTT_Nom}
DQ, DM
DQS , DQS
TDQS , TDQS
End point
T_SW21
Extrapolated point
at V_{RTT_Nom}
T_SW11
V_SW1
V_SW2
V_{RTT_Wr}
t_ADC
T_SW22
V_{RTT_Nom}
T_SW12
End point Extrapolated point at V_{RTT_Wr}
V_SSQ
Figure 18. Definition of tADC
Page 27 of 59
Rev. 1.0 March 2009