K5A3X80YTC Datasheet, PDF (36/45 Pages) Samsung semiconductor – MCP MEMORY

K5A3x80YT(B)C
Flash SWITCHING WAVEFORMS
Read While Write Operations
Address
Read
tRC
DA1
tAS
Command
tWC
DA2
(555H)
tAH
CE_F
Read
tRC
DA1
tAA
tCE
tOE
Command
tWC
DA2
(PA)
OE
WE
tOES
tOEH2
tDF
tWP
tDH
tDF
tDS
DQ
Valid
Output
Valid
Input
(A0H)
Valid
Output
Valid
Input
(PD)
Preliminary
MCP MEMORY
Read
tRC
Read
tRC
DA1
tAS
tAHT
DA2
(PA)
tCEPH
Valid
Output
Status
NOTE: This is an example in the program-case of the Read While Write function.
DA1 : Address of Bank1, DA2 : Address of Bank 2
PA = Program Address at one bank , RA = Read Address at the other bank, PD = Program Data In , RD = Read Data Out
Parameter
Write Cycle Time
Write Pulse Width
Write Pulse Width High
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
OE Setup Time
OE Hold Time
CE_F & OE Disable Time
Address Hold Time
CE_F High during toggle bit polling
Symbol
tWC
tWP
tWPH
tAS
tAH
tDS
tDH
tRC
tCE
tAA
tOE
tOES
tOEH2
tDF
tAHT
tCEPH
70ns
Min
Max
70
-
35
-
25
-
0
-
45
-
35
-
0
-
70
-
-
70
-
70
-
25
0
-
10
-
-
16
0
-
20
-
80ns
Unit
Min
Max
80
-
ns
35
-
ns
25
-
ns
0
-
ns
45
-
ns
35
-
ns
0
-
ns
80
-
ns
-
80
ns
-
80
ns
-
25
ns
0
-
ns
10
-
ns
-
16
ns
0
-
ns
20
-
ns
- 36 -
Revision 0.0
November 2002