K5A3X80YTC Datasheet, PDF (35/45 Pages) Samsung semiconductor – MCP MEMORY

K5A3x80YT(B)C
Flash SWITCHING WAVEFORMS
Chip/Block Erase Operations
Address
CE_F
555H
tAS
2AAH
tAH
tOES
OE
tWC
tWP
WE
DATA
RY/BY
tWPH
tCS
tDH
AAH
tDS
55H
555H
80H
Preliminary
MCP MEMORY
555H
2AAH
555H for Chip Erase
BA
tRC
AAH
10H for Chip Erase
55H
30H
Vcc_F
tVCS
NOTE: BA : Block Address
Parameter
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
OE Setup Time
CE_F Setup Time
Write Pulse Width
Write Pulse Width High
Read Cycle Time
Vcc_F Set Up Time
Symbol
tWC
tAS
tAH
tDS
tDH
tOES
tCS
tWP
tWPH
tRC
tVCS
70ns
Min
Max
70
-
0
-
45
-
35
-
0
-
0
-
0
-
35
-
25
-
70
-
50
-
80ns
Min
Max
80
-
0
-
45
-
35
-
0
-
0
-
0
-
35
-
25
-
80
-
50
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
- 35 -
Revision 0.0
November 2002