K5A3X80YTC Datasheet, PDF (28/45 Pages) Samsung semiconductor – MCP MEMORY

K5A3x80YT(B)C
Preliminary
MCP MEMORY
Flash AC CHARACTERISTICS
Write(Erase/Program)Operations
Alternate WE Controlled Write
Write Cycle Time (1)
Address Setup Time
Parameter
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time (1)
Output Enable
Hold Time
Read (1)
Toggle and Data Polling (1)
CE_F Setup Time
CE_F Hold Time
Write Pulse Width
Write Pulse Width High
Programming Operation
Word
Byte
Accelerated Programming Operation
Word
Byte
Block Erase Operation (2)
Symbol
tWC
tAS
tASO
tAH
tAHT
tDS
tDH
tOES
tOEH1
tOEH2
tCS
tCH
tWP
tWPH
tPGM
tACCPGM
tBERS
70ns
Min
Max
70
-
0
-
55
-
45
-
0
-
35
-
0
-
0
-
0
-
10
-
0
-
0
-
35
-
25
-
14(typ.)
9(typ.)
9(typ.)
7(typ.)
0.7(typ.)
Vcc_F Set Up Time
Write Recovery Time from RY/BY
RESET High Time Before Read
RESET to Power Down Time
Program/Erase Valid to RY/BY Delay
VID Rising and Falling Time
RESET Pulse Width
RESET Low to RY/BY High
RESET Setup Time for Temporary Unprotect
RESET Low Setup Time
RESET High to Address Valid
Read Recovery Time Before Write
CE High during toggling bit polling
OE High during toggling bit polling
tVCS
50
-
tRB
0
-
tRH
50
-
tRPD
20
-
tBUSY
90
-
tVID
500
-
tRP
500
-
tRRB
-
20
tRSP
1
-
tRSTS
500
-
tRSTW
200
-
tGHWL
0
-
tCEPH
20
-
tOEPH
20
-
NOTES: 1. Not 100% tested.
2. The duration of the Program or Erase operation varies and is calculated in the internal algorithms.
80ns
Unit
Min Max
80
-
ns
0
-
ns
55
-
ns
45
-
ns
0
-
ns
35
-
ns
0
-
ns
0
-
ns
0
-
ns
10
-
ns
0
-
ns
0
-
ns
35
-
ns
25
-
ns
14(typ.)
µs
9(typ.)
µs
9(typ.)
µs
7(typ.)
µs
0.7(typ.)
sec
50
-
µs
0
-
ns
50
-
ns
20
-
µs
90
-
ns
500
-
ns
500
-
ns
-
20
µs
1
-
µs
500
-
ns
200
-
ns
0
-
ns
20
-
ns
20
-
ns
- 28 -
Revision 0.0
November 2002