K5A3X80YTC Datasheet, PDF (16/45 Pages) Samsung semiconductor – MCP MEMORY

K5A3x80YT(B)C
Preliminary
MCP MEMORY
START
COUNT = 1
RESET=VID
Wait 1µs
First Write
Cycle=60h?
No _{Temporary Block Group}
Unprotect Mode
Yes
Yes Block Group
Protection ?
Block Protect
Algorithm
Set up Block Group
address
Block Group Protect:
Write 60H to Block
Group address with
A6=0,A1=1
A0=0
Wait 150µs
Increment
COUNT
Verify Block Group
Protect:Write 40H to
Block Group address
with A6=0,
A1=1,A0=0
Read from
Block Group address
with A6=0,
A1=1,A0=0
No
COUNT
=25?
No
Data=01h?
No
Block Unprotect
No
All Block Groups
Yes
Block Group <i>, i= 0
Protected ?
Algorithm
Block Group Unprotect
Write 60H
with
A6=1,A1=1
A0=0
Reset
COUNT=1
Increment
COUNT
Wait 15ms
Verify Block Group
Unprotect:Write 40H to
Block Group address
with A6=1,
A1=1,A0=0
No
COUNT
=1000?
Read from
Block Group address
with A6=1,
A1=1,A0=0
No
Data=00h?
Set up next Block
Group address
Yes
Device failed
Yes
Protect another
Block Group? _Yes
No
Remove VID
from RESET
Write RESET
command
END
Yes
Device failed
Yes
Last Block Group ^No
verified ?
Yes
Remove VID
from RESET
Write RESET
command
END
NOTE: All blocks must be protected before unprotect operation is executing.
Figure 9. Block Group Protection & Unprotection Algorithms
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Revision 0.0
November 2002