K5A3X80YTC Datasheet, PDF (26/45 Pages) Samsung semiconductor – MCP MEMORY

K5A3x80YT(B)C
Preliminary
MCP MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Vcc
Vcc_F , Vcc_S
-0.3 to +3.6
RESET
-0.3 to +12.5
Voltage on any ball relative to Vss
V
WP/ACC
VIN
-0.3 to +12.5
All Other Balls
-0.3 to Vcc+0.3V(Max.3.6V)
Temperature Under Bias
Tbias
-40 to +125
°C
Storage Temperature
Tstg
-65 to +150
°C
Operating Temperature
TA
-40 to +85
°C
NOTES:
1. Minimum DC voltage is -0.3V on Input/ Output balls. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC voltage on
input / output balls is Vcc+0.3V(Max. 3.6V) which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Minimum DC voltage is -0.3V on RESET and WP/ACC balls. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC
voltage on RESET and WP/ACC balls are 12.5V which, during transitions, may overshoot to 14.0V for periods <20ns.
3. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS(Voltage reference to Vss)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
Supply Voltage
Vcc_F , Vcc_S
2.7
3.0
3.3
V
Vss
0
0
0
V
DC CHARACTERISTICS
Parameter
Input Leakage Current
Output Leakage Current
Input Low Level
Common
Input High Level
Symbol
Test Conditions
Min Typ Max Unit
ILI VIN=Vss to Vcc, Vcc=Vccmax
-1.0
-
+1.0 µA
ILO VOUT=Vss to Vcc, Vcc=Vccmax, OE=VIH -1.0
-
+1.0 µA
VIL
-0.3
-
0.5
V
VIH
2.2
-
Vcc
+0.3
V
Output Low Level
Output High Level
RESET Input Leakage Current
WP/ACC Input Leakage Current
Active Read Current (1)
VOL IOL= 2.1mA, Vcc = Vccmin
-
-
0.4
V
VOH IOH= -1.0mA, Vcc = Vccmin
2.3
-
-
V
ILIT Vcc_F=Vccmax, RESET=12.5V
-
-
35
µA
ILIW Vcc_F=Vccmax, WP/ACC=12.5V
-
-
35
µA
ICC1 CE_F=VIL, OE=VIH
5MHz
-
14
20
mA
1MHz
-
3
6
Active Write Current (2)
Read While Program Current (3)
Flash
Read While Erase Current (3)
Program While Erase Suspend
Current
ICC2
ICC3
ICC4
CE_F=VIL, OE=VIH
CE_F=VIL, OE=VIH
CE_F=VIL, OE=VIH
ICC5 CE_F=VIL, OE=VIH
-
15
30 mA
-
25
50 mA
-
25
50 mA
-
15
35 mA
ACC Accelerated Program
Current
Standby Current
Standby Curren During Reset
IACC CE_F=VIL, OE=VIH
ACC Ball
-
Vcc_F Ball
-
Vcc_F=Vcc_Fmax, CE_F=Vcc_F± 0.3V,
ISB1 RESET=Vcc_F± 0.3V,
-
WP/ACC=Vcc_F± 0.3V or Vss± 0.3V
ISB2
Vcc_F=Vcc_Fmax, RESET=Vss±0.3V,
WP/ACC=Vcc_F± 0.3V or Vss± 0.3V
-
5
10
mA
15
30
5
18
µA
5
18
µA
- 26 -
Revision 0.0
November 2002