M16C5L_15 Datasheet, PDF (96/116 Pages) Renesas Technology Corp – RENESAS MCU

M16C/5L Group, M16C/56 Group
5. Electrical Characteristics
K-Version, V_CC = 5 V
Table 5.58 Electrical Characteristics (2)
T_opr = −40°C to 125°C unless otherwise specified.
Symbol
Parameter
Measuring Condition
f_(BCLK) = 32 MHz,
XIN = 8 MHz (square wave), PLL multiply-by-8
125 kHz on-chip oscillator operating
High speed mode
f_(BCLK) = 20 MHz,
XIN = 20 MHz (square wave),
125 kHz on-chip oscillator operating
f_(BCLK) = 16 MHz,
XIN = 16 MHz (square wave),
125 kHz on-chip oscillator operating
40 MHz on-chip oscillator
mode
Main clock stopped
40 MHz on-chip oscillator operating
125 kHz on-chip oscillator operating
No division
Main clock stopped
40 MHz on-chip oscillator operating
125 kHz on-chip oscillator operating
Divide-by-8
Main clock stopped
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator ^{125 kHz on-chip oscillator operating}
mode
Divide-by-8
FMR22 = FMR23 = 1 (Low-current consumption
read mode)
Power supply current
(V_CC = 4.2 V to 5.5 V)
Low power mode
I_CC
In single-chip mode, the
output pins are open and
other pins are V_SS
f_(BCLK) = 32 kHz
On Flash memory ⁽²⁾
FMR22 = FMR23 = 1 (Low-current consumption
read mode)
Main clock stopped
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator operating
Peripheral clock operating
T_opr = 25°C
Wait mode
Main clock stopped
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator operating
Peripheral clock operating
T_opr = 105°C
Main clock stopped
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator operating
Peripheral clock operating
T_opr = 125°C
T_opr = 25°C
Stop mode
T_opr = 105°C
T_opr = 125°C
Standard
Min. Typ. Max.
28
42
20
30
16
20
30
5
150 500
160
20
80
120
3
15
60
100
Unit
mA
mA
mA
mA
mA
μA
μA
μA
μA
μA
μA
μA
μA
During flash memory ^f(BCLK) ^{= 10 MHz, PM17 = 1 (one wait)}
program
V_CC = 5.0 V
During flash memory ^f(BCLK) ^{= 10 MHz, PM17 = 1 (one wait)}
erase
V_CC = 5.0 V
I_det2
Low voltage detection dissipation current
I_det0
Reset area detection dissipation current
20.0
mA
30.0
mA
3
μA
6
μA
Note:
1. This indicates the memory in which the program to be executed exists.
R01DS0035EJ0110 Rev.1.10
Sep 01, 2011
Page 96 of 112