M16C5L_15 Datasheet, PDF (76/116 Pages) Renesas Technology Corp – RENESAS MCU

M16C/5L Group, M16C/56 Group
5. Electrical Characteristics
5.3 Electrical Characteristics (J-Version, V_CC = 3 V)
5.3.1 Electrical Characteristics
J-Version, V_CC = 3 V
Table 5.29 Electrical Characteristics (1)
V_CC = 3.0 to 3.6 V, V_SS = 0 V at T_opr = −40°C to 85°C, f_(BCLK)= 32 MHz unless otherwise specified.
Symbol
Parameter
Measuring Condition
Standard
Min.
Typ.
V_OH
HIGH
output
voltage
P0_0 to P0_7, P1_0 to P1_7, P2_0 to
P2_7, P3_0 to P3_7, P6_0 to P6_7,
P7_0 to P7_7, P8_0 to P8_7, P9_0 to
P9_3, P9_5 to P9_7, P10_0 to P10_7
I_OH = −1 mA
V_CC−0.5
HIGH POWER I_OH = −0.1 mA
V_CC−0.5
HIGH output voltage XOUT
V_OH
LOW POWER I_OH = −50 μA
V_CC−0.5
HIGH POWER With no load applied
2.5
HIGH output voltage XCOUT
LOW POWER With no load applied
1.6
P0_0 to P0_7, P1_0 to P1_7, P2_0 to
V_OL
LOW output P2_7, P3_0 to P3_7, P6_0 to P6_7,
voltage
P7_0 to P7_7, P8_0 to P8_7, P9_0 to
I_OL = 1mA
P9_3, P9_5 to P9_7, P10_0 to P10_7
HIGH POWER I_OL = 0.1mA
LOW output voltage XOUT
V_OL
LOW POWER I_OL = 50μA
HIGH POWER With no load applied
0
LOW output voltage XCOUT
LOW POWER With no load applied
0
V_T+-V_T-
Hysteresis
TA0IN to TA4IN, TB0IN to TB2IN, INT0
to INT5, NMI, ADTRG, CTS0 to CTS3,
SCL2, SDA2, CLK0 to CLK4, TA0OUT
to TA4OUT, KI0 to KI3, RXD0 to RXD4,
ZP, IDU, IDW, IDV, SD, INPC1_0 to
INPC1_7, CRX0
V_T+-V_T-
Hysteresis RESET
V_T+-V_T-
Hysteresis XIN
P0_0 to P0_7, P1_0 to P1_7, P2_0 to
I_IH
HIGH input
current
P2_7, P3_0 to P3_7, P6_0 to P6_7,
P7_0 to P7_7, P8_0 to P8_7, P9_0 to
P9_3, P9_5 to P9_7, P10_0 to P10_7
V_I = 3V
XIN, RESET, CNVSS
P0_0 to P0_7, P1_0 to P1_7, P2_0 to
I_IL
LOW input
current
P2_7, P3_0 to P3_7, P6_0 to P6_7,
P7_0 to P7_7, P8_0 to P8_7, P9_0 to
P9_3, P9_5 to P9_7, P10_0 to P10_7
V_I = 0V
XIN, RESET, CNVSS
R_PULLUP
Pull-up
resistance
P0_0 to P0_7, P1_0 to P1_7, P2_0 to
P2_7, P3_0 to P3_7, P6_0 to P6_7,
P7_0 to P7_7, P8_0 to P8_7, P9_0 to
P9_3, P9_5 to P9_7, P10_0 to P10_7
V_I = 0V
50
100
R_fXIN
R_fXCIN
V_RAM
Feedback resistance XIN
Feedback resistance XCIN
RAM retention voltage
At stop mode
3.0
25
2.0
Unit
Max.
V_CC
V
V_CC
V
V_CC
V
0.5 V
0.5
V
0.5
V
0.4V_CC V
1.8 V
0.8 V
4.0 μA
−4.0 μA
500 kΩ
MΩ
MΩ
V
R01DS0035EJ0110 Rev.1.10
Sep 01, 2011
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