M16C5L_15 Datasheet, PDF (62/116 Pages) Renesas Technology Corp – RENESAS MCU

M16C/5L Group, M16C/56 Group
5. Electrical Characteristics
J-Version
Table 5.6 Flash Memory (Program ROM 1, 2) Electrical Characteristics
V_CC = 3.0 to 5.5 V at T_opr = 0°C to 60°C, unless otherwise specified.
Symbol
Parameter
Conditions
-
-
-
t_d(SR-SUS)
Program/erase cycles ^{(1, 3, 4)}
2 words program time
Lock bit program time
Block erase time
V_CC = 3.3 V, T_opr = 25°C
V_CC = 3.3 V, T_opr = 25°C
V_CC = 3.3 V, T_opr = 25°C
V_CC = 3.3 V, T_opr = 25°C
Time delay from suspend request
until suspend
Min.
1,000 ⁽²⁾
Standard
Typ.
Max.
150
4000
70
3000
0.2
3.0
5 + -------3--------
f(BCLK)
Unit
times
μs
μs
s
ms
-
Interval from erase start/restart
until following suspend request
-
Suspend interval necessary for
auto-erasure to complete ⁽⁷⁾
0
μs
20
ms
-
Time from suspend until erase
restart
30 + -------1--------
f(BCLK)
μs
-
Program, erase voltage
3.0
-
Read voltage
Topr = -40°C to 85°C
3.0
-
Program, erase temperature
0
t_PS
Flash memory circuit stabilization wait time
-
Data hold time ⁽⁶⁾
Ambient temperature = 55°C 20
5.5
V
5.5
V
60
°C
50
μs
year
Notes:
1. Definition of program and erase cycles:
The program and erase cycles refer to the number of per-block erasures. If the program and erase cycles are n
(n = 1,000), each block can be erased n times. For example, if a 64 KB block is erased after writing 2 word data
16,384 times, each to a different address, this counts as one program and erase cycles. Data cannot be written
to the same address more than once without erasing the block (rewrite prohibited).
2. Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing
to sequential addresses in turn so that as much of the block as possible is used up before performing an erase
operation. It is advisable to retain data on the erasure cycles of each block and limit the number of erase
operations to a certain number.
4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the
block erase command at least three times until the erase error does not occur.
5. Customers desiring program/erase failure rate information should contact a Renesas Electronics sales office.
6. The data hold time includes time that the power supply is off or the clock is not supplied.
7. After an erase start or erase restart, if an interval of at least 20 ms is not set before the next suspend request, the
erase sequence cannot be completed.
R01DS0035EJ0110 Rev.1.10
Sep 01, 2011
Page 62 of 112