H8S-2258 Datasheet, PDF (949/1071 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8S Family H8S-2200 Series

Section 27 Electrical Characteristics
Notes: 1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 128 bytes (Shows the total period for which the P1 bit in the
flash memory control register 1 (FLMCR1) is set. It does not include the program
verification time.)
3. Erase block time (Shows the total period for which the E1 bit in FLMCR1 is set. It does
not include the erase verification time.)
4. Maximum programming time
tp (max) = Wait time after P1 bit setting (tsp) × Maximum programming count (N)
(tsp30 + tsp10) × 6 + (tsp200) × 994
5. For the maximum erase time (tE(max)), the following relationship applies between the
wait time after E1 bit setting (z) and the maximum erase count (N):
tE(max) = Wait time after E1 bit setting (tse) × Maximum erase count (N)
6. The minimum times that all characteristics after reprogramming are guaranteed. (The
range between 1 and a minimum value is guaranteed.)
7. Reference value at 25°C. (Normally, it is a reference that rewriting is enabled up to this
value.)
8. Data hold characteristics are when reprogramming is performed within the range of
specifications including a minimum value.
Rev. 5.00 Aug 08, 2006 page 863 of 982
REJ09B0054-0500