HAT3010R Datasheet, PDF (9/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
500
200
100
Coss
50
20 VGS = 0
Crss
f = 1 MHz
10
0
10 20 30 40
50
Drain to Source Voltage V _DS (V)
HAT3010R
Dynamic Input Characteristics
100
20
I_D=6A
80
V _DD = 50 V
25 V
10 V
60
V_DS
40
16
V_GS
12
8
20
V_DD = 50 V
4
25 V
10 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
1000
Switching Characteristics
300
100
t _d(off)
30
tr
t _d(on)
10
tf
3
V_GS = 10 V, V _DD = 30 V
PW = 5 µs, duty < 1 %
1
0.1 0.3 1 3 10 30 100
Drain Current I _D (A)
Reverse Drain Current vs.
Source to Drain Voltage
10
8
10 V
Pulse Test
6
4
5V
V_GS = 0, -5 V
2
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V _SD (V)
Rev.8, Aug. 2002, page 7 of 14