HAT3010R Datasheet, PDF (5/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

Electrical Characteristics (Ta = 25°C)
HAT3010R
• N Channel
Item
Symbol Min
Drain to source breakdown voltage V
60
(BR)DSS
Gate to source breakdown voltage V
±20
(BR)GSS
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V
GS(off)
1.0
Static drain to source on state
R
—
DS(on)
resistance
R
—
DS(on)
Forward transfer admittance
|y_fs|
7
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t
—
d(on)
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t
—
rr
Notes: 4. Pulse test
Typ Max
—
—
—
—
—
±10
—
1
—
2.5
25
32
32
45
11
—
1050 —
150 —
90
—
15
—
15
—
55
—
10
—
0.85 1.10
50
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I = 10 mA, V = 0
D
GS
I
G
=
±100
µA,
V
DS
=
0
V_GS = ±16 V, V_DS = 0
V_DS = 60 V, V_GS = 0
V = 10 V, I = 1 mA
DS
D
I = 3 A, V = 10 V ^Note4
D
GS
I = 3 A, V = 4.5 V ^Note4
D
GS
I_D = 3 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V = 10 V, I = 3 A
GS
D
V_DD ≈ 30 V
R_L = 10 Ω
R_g = 4.7 Ω
IF = 6 A, V_GS = 0 ^Note4
IF =6 A, V = 0
GS
diF/ dt =100 A/µs
Rev.8, Aug. 2002, page 3 of 14