HAT3010R Datasheet, PDF (12/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3010R
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
500
200
100
Coss
50
20 VGS = 0
Crss
f = 1 MHz
10
0 -10 -20 -30 -40 -50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
0
0
V _DD= -10 V
-25 V
-20
-50 V
-4
I _D = -5 A
-40
-8
V_DS
-60
V_DD = -10 V
-25 V
-80
-50 V
V_GS
-12
-16
-100 ₀
8
16 24 32
Gate Charge Qg (nc)
-20
40
1000
Switching Characteristics
300
100
t _d(off)
tr
30
t _d(on)
10
tf
3
V_GS = -10 V, V_DD= -30 V
PW = 5 µs, duty < 1 %
1
-0.1 -0.3 -1 -3 -10 -30 -100
Drain Current I _D (A)
Reverse Drain Current vs.
Source to Drain Voltage
-10
-8
-10 V
Pulse Test
-6
-4
-5 V
V_GS = 0, 5 V
-2
0
-0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage V _SD (V)
Rev.8, Aug. 2002, page 10 of 14