HAT3010R Datasheet, PDF (6/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3010R
• P Channel
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS
–60
Gate to source breakdown
voltage
V
(BR)GSS
±20
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
—
—
–1.0
—
—
3
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t
—
f
Body–drain diode forward voltage V
—
DF
Body–drain diode reverse
recovery time
t_rr
—
Notes: 5. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
±10 µA
—
–1
µA
—
–2.5 V
60
76
mΩ
90
130 mΩ
5
—
S
1350 —
pF
135 —
pF
85
—
pF
20
—
ns
15
—
ns
55
—
ns
10
—
ns
-0.85 -1.10 V
50
—
ns
Test Conditions
I_D = –10 mA, V_GS = 0
I
G
=
±100
µA,
V
DS
=
0
V_GS = ±16 V, V_DS = 0
V_DS = –60 V, V_GS = 0
V_DS = –10 V, I _D = –1 mA
I_D = –2.5 A, V_GS = –10 V ^Note5
I_D = –2.5 A, V_GS = – 4.5 V ^Note5
I_D = –2.5 A, V_DS = –10 V ^Note5
V_DS = –10 V
V =0
GS
f = 1 MHz
V_GS = –10 V, I_D = –2.5 A
V_DD ≈ –30 V
R_L = 12 Ω
R
g
=
4.7
Ω
IF = –5 A, V = 0 Note5
GS
IF = –5 A, V_GS = 0
diF/ dt = 100 A/µs
Rev.8, Aug. 2002, page 4 of 14