HAT3010R Datasheet, PDF (13/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
HAT3010R
Rev.8, Aug. 2002, page 11 of 14