HAT3010R Datasheet, PDF (14/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3010R
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.1
0.01
0.001
0.05
0.02
0.01
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θ _{ch - f(t) =} γ_{s (t) x} θ_{ch - f}
θ _{ch - f = 125°C/W, Ta = 25°C}
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θ _{ch - f(t) =} γ_{s (t) x} θ_{ch - f}
θ _{ch - f = 166°C/W, Ta = 25°C}
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Rev.8, Aug. 2002, page 12 of 14