HAT3010R Datasheet, PDF (10/16 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3010R
• P Channel
-100
-30
-10
-3
-1
-0.3
-0.1
-0.03
-0.01
Maximum Safe Operation Area
10 _µs
100
Othpiseararet^Dioa^Cni^O_si^pn^{erationP(WPW=<1}1^10N₀^ommt_s^e₎^ss₅
µ_s
limited by R DS(on)
-0.003
Ta = 25°C
1 shot Pulse
-0.001
-0.1 -0.3 -1
-3 -10 -30 -100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
-10
-10 V
Pulse Test
-8
-6 V
-4.5 V
-3.5 V
-6
-4
-2
V_GS = -2.5 V
0
-2
-4
-6
-8 -10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
-10
V _DS = -10 V
Pulse Test
-8
-6
-4
-2
Tc = 75°C
25°C
−25°C
0
-1
-2
-3
-4
-5
Gate to Source Voltage V GS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-1
Pulse Test
-0.8
-0.6
-0.4
I D = -5 A
-0.2
-2 A
-1 A
0
-5
-10
-15
-20
Gate to Source Voltage V _GS (V)
Rev.8, Aug. 2002, page 8 of 14